Tham khảo Rutheni

  1. ↑ “Ruthenium: ruthenium(I) fluoride compound data”. OpenMOPAC.net. Truy cập ngày 10 tháng 12 năm 2007. 
  2. ↑ Magnetic susceptibility of the elements and inorganic compounds, in Handbook of Chemistry and Physics 81st edition, CRC press.
  3. 1 2 Nature's Building Block, John Emsley, Nhà in Đại học Oxford, 2001
  4. ↑ – Giáo sư Anthony Hill – Nghiên cứu hiện tại
  5. ↑ Manner W. L.; Girolami G. S.; Nuzzo R. G., Sequential Dehydrogenation of Unsaturated Cyclic C5 and C6 Hydrocarbons on Pt(111). J. Phys. Chem. B 1998, 102, (50), 10295-10306.
  6. ↑ Jakob P.; Menzel D., The adsorption of benzene on Ru(001). Surface Science 1988, 210, 503-530.
  7. 1 2 Jakob P. Adsorption und thermische Evolution von aromatischen Molekülen auf Ru(001): Benzol, Benzol+O, CO, H und Pyridin. Doctoral, Technische Universität München, München, 1989.
  8. 1 2 Schneider A.; Popovska N.; Jipa I.; Atakan B.; Siddiqi M. A.; Siddiqui R.; Zenneck U., Minimizing the carbon content of thin ruthenium films by MOCVD precursor complex design and process control. Chemical Vapor Deposition 2007, 13, (8), 389-395.
  9. 1 2 Schneider A.; Popovska N.; Holzmann F.; Gerhard H.; Topf C.; Zenneck U., [(1,5-Cyclooctadiene)(toluene)ruthenium(0)]: A Novel Precursor for the MOCVD of Thin Ruthenium Films. Chemical Vapor Deposition 2005, 11, (2), 99-105.
  10. ↑ Schneider A. Metallorganische Chemische Dasphasenabscheidung (MOCVD) von Übergangsmetallen am Beispiel von Eisen, Ruthenium und Wolfram. Doctoral, Universität Erlangen-Nürnberg, Erlangen, 2006.
  11. ↑ Green M. L.; Gross M. L.; Papa L. E.; Schnoes K. J.; Brasen D., Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films. Journal of The Electrochemical Society 1985, (132), 2677.
  12. ↑ Wang Q.; Ekerdt J. G.; Gay D.; Sun Y.-M.; White J. M., Low-temperature chemical vapor deposition and scaling limit of ultrathin Ru films. Applied Physics Letters 2004, 84, (8), 1380-1382.
  13. ↑ Trent D. E.; Paris B.; Krause H. H., Vapor Deposition of Pure Ruthenium Metal from Ruthenocene. Inorg. Chem. 1964, 3, (7), 1057-1058.
  14. ↑ Park S. E.; Kim H. M.; Kim K. B.; Min S. H., Metallorganic chemical vapor deposition of Ru and RuO2 using ruthenocene precursor and oxygen gas. Journal of the Electrochemical Society 2000, 147, (1), 203-209.
  15. 1 2 Aoyama T.; Eguchi K., Ruthenium films prepared by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl)ruthenium. Japanese Journal of Applied Physics 1999, 38, (10A), 1134-6.
  16. ↑ Kang S. Y.; Choi K. H.; Lee S. K.; Hwang C. S.; Kim H. J., Thermodynamic Calculations and Metallorganic Chemical Vapor Deposition of Ruthenium Thin Films Using Bis(ethyl-pi-cyclopentadienyl)Ru for Memory Applications. Journal of The Electrochemical Society 2000, 147, (3), 1161-1167.
  17. ↑ Matsui Y.; Hiratani M.; Nabatame T.; Shimamoto Y.; Kimura S., Characteristics of Ruthenium Films Prepared by Chemical Vapor Deposition Using Bis(ethylcyclopentadienyl)ruthenium Precursor. Electrochemical and Solid-State Letters 2002, 5, (1), C18-C21.
  18. ↑ Nabatame T.; Hiratani M.; Kadoshima M.; Shimamoto Y.; Matsui Y.; Ohji Y.; Asano I.; Fujiwara T.; Suzuki T., Properties of ruthenium films prepared by liquid source metalorganic chemical vapor deposition using Ru(EtCp)2 with tetrahydrofuran solvent. Japanese Journal of Applied Physics 2000, 39, (11B), 1188-90.
  19. ↑ Kadoshima M.; Nabatame T.; Hiratani M.; Nakamura Y.; Asano I.; Suzuki T., Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)3 Dissolved with Tetrahydrofuran Solvent. Japanese Journal of Applied Physics 2002, 41 Phần 2, (3B), L347-L350.
  20. ↑ Lai Y.-H.; Chen Y.-L.; Chi Y.; Liu C.-S.; Carty A. J.; Peng S.-M.; Lee G.-H., Deposition of Ru and RuO2 thin films employing dicarbonyl bis-diketonate ruthenium complexes as CVD source reagents. Journal of Materials Chemistry 2003, 13, 1999-2006.
  21. ↑ Lee J.-H.; Kim J.-Y.; Rhee S.-W.; Yang D.; Kim D.-H.; Yang C.-H.; Han Y.-K.; Hwang C.-J., Chemical vapor deposition of Ru thin films by direct liquid injection of Ru(OD)3 (OD=octanedionate). Journal of Vacuum Science & Technology A 2000, 18, (5), 2400-2403.
  22. ↑ Kang S. Y.; Lim H. J.; Hwang C. S.; Kim H. J., Metallorganic chemical vapor deposition of Ru films using cyclopentadienyl-propylcyclopentadienylruthenium(II) and oxygen. Journal of the Electrochemical Society 2002, 149, (6), C317-C323.
  23. ↑ Choi J.; Choi Y.; Hong J.; Tian H.; Roh J.-S.; Kim Y.; Chung T.-M.; Woo Oh Y.; Kim Y.; Kim C. G.; No K., Composition and Electrical Properties of Metallic Ru Thin Films Deposited Using Ru(C6H6)(C6H8) Precursor. Japanese Journal of Applied Physics 2002, 41, (11B), 6852-6856.
  24. ↑ It's Elemental - Ruthenium
  25. ↑ Richards A.D. & Rodger A. (2007). Synthetic metallomolecules as agents for the control of DNA structure Chem. Soc. Rev. 36 471-483.
  26. ↑ Wei P.; Desu S. B., Reactive ion etching of RuO2 films: the role of additive gases in O2 discharge. Physica Status Solidi A 1997, 161, (1), 201-15.
  27. ↑ Lesaicherre P. Y.; Yamamichi S.; Takemura K.; Yamaguchi H.; Tokashiki K.; Miyasaka Y.; Yoshida M.; Ono H., A Gbit-scale DRAM stacked capacitor with ECR MOCVD SrTiO3 over RIE patterned RuO2/TiN storage nodes. Integrated Ferroelectrics 1995, 11, (1-4), 81-100.
  28. ↑ Pan W.; Desu S. B., Reactive Ion Etching of RuO2, Thin-Films Using the Gas-Mixture O2 Cf3cfh2. Journal of Vacuum Science & Technology B 1994, 12, (6), 3208-3213.
  29. ↑ Vijay D. P.; Desu S. B.; Pan W., Reactive Ion Etching of Lead-Zirconate-Titanate (PZT) Thin-Film Capacitors. Journal of the Electrochemical Society 1993, 140, (9), 2635-2639.
  30. ↑ Saito S.; Kuramasu K., Plasma etching of RuO2 thin films. Japanese Journal of Applied Physics 1992, 31, (1), 135-8.
  31. ↑ Iizuka T.; Arita K.; Yamamoto I.; Yamamichi S., (Ba,Sr)TiO3 thin film capacitors with Ru electrodes for application to ULSI processes. NEC Research and Development 2001, 42, (1), 64-9.
  32. ↑ Yamamichi S.; Lesaicherre P. Y.; Yamaguchi H.; Takemura K.; Sone S.; Yabuta H.; Sato K.; Tamura T.; Nakajima K.; Ohnishi S.; Tokashiki K.; Hayashi Y.; Kato Y.; Miyasaka Y.; Yoshida M.; Ono H., A stacked capacitor technology with ECR plasma MOCVD (Ba,Sr)TiO3 and RuO2/Ru/TiN/TiSix storage nodes for Gb-scale DRAM's. IEEE Transactions on Electron Devices 1997, 44, (7), 1076-1083.
  33. ↑ Bandaru J.; Sands T.; Tsakalakos L., Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O3 capacitors directly on silicon. Journal of Applied Physics 1998, 84, (2), 1121-1125.
  34. ↑ Maiwa H.; Ichinose N.; Okazaki K., Preparation and properties of Ru and RuO2 thin film electrodes for ferroelectric thin films. Jpn. J. Appl. Phys. 1994, 33, (9B), 5223-6.
  35. ↑ Misra V.; Lucovsky G.; Parsons G., Issues in high-kappa gate stack interfaces. MRS Bulletin 2002, 27, (3), 212-216.
  36. ↑ Chan R.; Arunagiri T. N.; Zhang Y.; Chyan O.; Wallace R. M.; Kim M. J.; Hurd T. Q., Diffusion Studies of Copper on Ruthenium Thin Film. Electrochemical and Solid-State Letters 2004, 7, (8), G154-G157.
  37. ↑ Cho S. K.; Kim S.-K.; Kim J. J.; Oh S. M., Damascene Cu electrodeposition on metal organic chemical vapor deposition-grown Ru thin film barrier. Journal of Vacuum Science and Technology B 2004, 22, (6), 2649-2653.
  38. ↑ Chyan O.; Arunagiri T. N.; Ponnuswamy T., Electrodeposition of Copper Thin Film on Ruthenium. Journal of The Electrochemical Society 2003, 150, (5), C347-C350.
  39. ↑ Kwon O.-K.; Kwon S.-H.; Park H.-S.; Kang S.-W., PEALD of a Ruthenium Adhesion Layer for Copper Interconnects. Journal of The Electrochemical Society 2004, 151, (12), C753-C756.
  40. ↑ Kwon O.-K.; Kim J.-H.; Park H.-S.; Kang S.-W., Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer. Journal of The Electrochemical Society 2004, 151, (2), G109-G112.
  41. ↑ Moffat T. P.; Walker M.; Chen P. J.; Bonevich J. E.; Egelhoff W. F.; Richter L.; Witt C.; Aaltonen T.; Ritala M.; Leskelä M.; Josella D., Electrodeposition of Cu on Ru Barrier Layers for Damascene Processing. Journal of The Electrochemical Society 2006, 153, (1), C37-C50.
  42. ↑ Brian Hayes, Terabyte Territory, American Scientist, quyển 90 số 3 (tháng 5/6-2002) trang 212
  43. ↑ Ruthenium Tetroxide and Other Ruthenium Compounds?
  44. ↑ inhalation of radionuclides and carcinogenesis

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